VITUS H7LE 2017-06-08T15:26:24+00:00

VITUS
H7LE

10 mm² collimated to 7 mm² X-ray Silicon Drift Detector for Low-Eenergy XRF – EDX – TXRF – Applications

Unique Features

  • Basic low-energy module
  • Ultra thin polymer window
  • Sensitive down to Boron Kα at 185 eV

KEY PARAMETERS
(Guaranteed Values)

Table 1: Beyond the guaranteed minimum key parameters shown in the table above, typical energy resolution of a Premium Class VITUS H7LE SDD is better than 130 eV. P/B is typically greater than 18,000.
CUBE CLASS
PREMIUM CLASS
STANDARD CLASS
First amplification stage ASIC JFET JFET
FWHM Mn Kα (5.9 keV) ≤ 133 eV ≤ 133 eV ≤ 139 eV
FWHM C Kα (277 eV) ≤ 70 eV ≤ 80 eV ≤ 80 eV
Peak to background > 10,000 > 10,000 > 6,000
Peak to tail > 2,000 > 2,000 > 1,000
Optimal peaking time at max. cooling 1 µs 8 µs 8 µs
Absorption depth Si 450 µm 450 µm 450 µm
Peak shift stability up to 100 kcps < 1 eV < 1 eV < 1 eV
Max. input countrate 2,000 kcps 500 kcps 500 kcps
Windows AP3.3 polymer AP3.3 polymer AP3.3 polymer
Cooling performance
at +30°C heat sink temperature
∆T > 55 K ∆T > 55 K ∆T > 55 K
On-chip collimator Pd Pd Pd
Ordering codes V5C7T0-H7-PD3APN 133 V5F7T0-H7-PD3APN 133 V5F7T0-H7-PD3APN 139

KETEK VITUS H7LE SDD Spectrum

Spectrum

Figure 1: The spectrum has been acquired in KETEK’s standard end qualification test stand with an Fe-55 source using an XIA Mercury signal processing unit. The input count rate has been 10 kcps at a peaking time of 1 µs. The spectrum shows a very good energy resolution for Mn-Kα and an excellent peak-to-background ratio.

Energy Resolution

Figure 2: The energy resolution of the VITUS H7LE is dependent on both, the peaking time and the operating temperature. Depending on the application the best performance can be achieved by an appropriate selection of peaking time and set operating temperature.

KETEK VITUS H7LE SDD Energy Resolution vs. Peaking Time for different Chip Temperatures

KETEK VITUS H7LE SDD Energy Resolution vs. Input Count Rate for different Peaking Times

Figure 3: The VITUS H7LE shows excellent energy resolution stability for different input count rates up to reasonable deadtimes at each peaking time. The data was measured at optimum cooling with an Fe-55 source using an XIA Mercury signal processing unit.

OPERATION REQUIREMENTS

SDD Voltages and Currents

Ring1 (R1) -20 V ± 5 V 10 µA typ.
RingX (RX) -130 V ± 20 V 10 µA typ.
Back -60 V ± 5 V < 1 nA
Peltier Element 4 V 1000 mA max.

General parameters

Temperature Monitor NTC thermistor 10 kΩ @ 25 °C
Output signal ramped reset type

CUBE based SDDs

VI/O 3.3 V ± 0.1 V < 1 mA
Vs 2 V ± 0.1 V < 1 mA
Vsss -5 V ± 0.1 V < 1 mA
Output gain 1.6 mV/keV ± 20 %

FET based SDDs (Premium and Standard)

Drain 3 V ± 0.5 V 3 mA
Source 0 V
Bulk -5 V ± 3 V
Reset 1 V 1 µs
Feedback ramped output
Output gain 0.9 mV/keV ± 30 %

Operation

  • Pin wiring according to VITUS Operation Block Diagram
  • Detector operating voltages should be RC low-pass filtered and linearly regulated (KETEK electronics recommended)
  • KETEK reset type charge sensitive pre-amplifier with internal triggered reset pulses recommended
  • Short wiring length between detector and pre-amplifier recommended
  • Detector may only be operated with an appropriate heat sink

Block Diagram

Pin Assignment

Geometry

KETEK VITUS H7LE SDD Geometry