VITUS
Modules
KETEK’s VITUS Silicon Drift Detectors (SDD) are the state-of-the-art X-ray detectors based on siliconsubstrate. Their typical X-ray energy range is between 0.2 keV and 30 keV. They are used in applications such as EDX, EDS, XRF, TXRF in bench top as well as in handheld based systems. Due to their wide operating temperature range they are especially suited for industrial applications.
Outstanding performance
Energy resolution FWHM down to 126 eV for Mn Kα at 1 µs peaking time.
Energy resolution FWHM down to 123 eV for Mn Kα at 3 µs peaking time.
Spectrum showing the outstanding performance of the VITUS SDDs in low-energy regime. FWHM of 42 eV for C Kα line.
Unprecedented low-energy performance down to Li @ 53 eV
Low-energy spectrum acquired with VITUS SDD showing the Li and O Kα lines.
Product Portfolio
C = CUBE classP = Premium FET classS = Standard FET class
| class |  H7 |
 H20 |
H30 |
 H50 |
 H80 |
H150 |
 H7LE |
H18LE |
|
|---|---|---|---|---|---|---|---|---|---|
| COLLIMATED AREA (mm2) | – | 7 | 20 | 30 | 50 | 80 | 150 | 7 | 18 |
| ACTIVE AREA (mm2) | – | 10 | 30 | 40 | 65 | 109 | 170 | 10 | 30 |
| WINDOW | – | 8 μm Be | 8 μm Be | 8 μm Be | 12.5 μm Be | 25 μm Be | 25 μm Be | AP3.3 polymer | AP3.3 polymer |
| COOLING PERFORMANCE MAX Δ T @ 20°C HEAT SINK | – | 75 | 75 | 75 | 75 | 75 | 90 | 55 | 55 |
| AMPLIFICATION STAGE | C | ASIC | ASIC | ASIC | ASIC | ASIC | ASIC | ASIC | ASIC |
| P | JFET | JFET | JFET | JFET | JFET | n.a. | JFET | JFET | |
| S | JFET | JFET | JFET | JFET | JFET | n.a. | JFET | JFET | |
| OPTIMAL PEAKING TIME AT MAX. COOLING | C | 1 μs | 1 μs | 1 μs | 1 μs | 1 μs | 1 μs | 1 μs | 1 μs |
| P | 8 μs | 8 μs | 8 μs | 8 μs | 8 μs | n.a. | 8 μs | 8 μs | |
| S | 8 μs | 8 μs | 8 μs | 8 μs | 8 μs | n.a. | 8 μs | 8 μs | |
| GUARANTEED FWHM at MnKα (5.9 keV) [eV] | C | ≤ 129 | ≤ 129 | ≤ 129 | ≤ 129 | ≤ 136 | ≤ 136 | ≤ 133 | ≤ 136 |
| P | ≤ 129 | ≤ 129 | ≤ 129 | ≤ 129 | ≤ 136 | n.a. | ≤ 133 | ≤ 136 | |
| S | ≤ 139 | ≤ 139 | ≤ 139 | ≤ 139 | ≤ 160 | n.a. | ≤ 139 | ≤ 144 | |
| GUARANTEED P/B | C | > 15,000 | > 15,000 | > 15,000 | > 15,000 | > 15,000 | > 15,000 | > 10,000 | > 10,000 |
| P | > 15,000 | > 15,000 | > 15,000 | > 15,000 | > 15,000 | n.a. | > 10,000 | > 10,000 | |
| S | > 6,000 | > 6,000 | > 6,000 | > 6,000 | > 6,000 | n.a. | > 6,000 | > 6,000 | |
| GUARANTEED P/T | C | > 2,000 | > 2,000 | > 2,000 | > 2,000 | > 2,000 | > 2,000 | > 2,000 | > 2,000 |
| P | > 2,000 | > 2,000 | > 2,000 | > 2,000 | > 2,000 | n.a. | > 2,000 | > 2,000 | |
| S | > 1,000 | > 1,000 | > 1,000 | > 1,000 | > 1,000 | n.a. | > 1,000 | > 1,000 | |
| ABSORPTION DEPTH Si | – | 450 μm | 450 μm | 450 μm | 450 μm | 450 μm | 450 μm | 450 μm | 450 μm |
| PEAK SHIFT STABILITY UP TO 100 kcps | – | < 1 eV | < 1 eV | < 1 eV | < 1 eV | < 1 eV | < 1 eV | < 1 eV | < 1 eV |
| MAX. INPUT COUNT RATE | C | 2,000 kcps | 2,000 kcps | 2,000 kcps | 2,000 kcps | 2,000 kcps | 2,000 kcps | 2,000 kcps | 2,000 kcps |
| P | 500 kcps | 500 kcps | 500 kcps | 500 kcps | 500 kcps | n.a. | 500 kcps | 500 kcps | |
| S | 500 kcps | 500 kcps | 500 kcps | 500 kcps | 500 kcps | n.a. | 500 kcps | 500 kcps | |
| ON-CHIP COLLIMATOR | – | multilayer | multilayer | multilayer | multilayer | multilayer | multilayer | palladium | palladium |
| Learn More | Learn More | Learn More | Learn More | Learn More | Learn More | Learn More | Learn More |
Features
- Energy resolution down to 123 eV FWHM at Mn-Kα
- Excellent peak-to-background
- Operable at an ambient temperature of up to +80 °C with excellent performance
- High count rate capability up to 2,000 kcps
- Efficient integrated Peltier element
- No liquid nitrogen cooling required
- Radiation hardness during more than 10 years standard count rate exposure
- Collimated areas from 7 mm² to 150 mm² available
Functional Block Diagram
Applications
- XRF
- µ-XRF
- EDX
- EDS
- TXRF
- XRD
- Handheld