Silicon Drift Detectors

KETEK’s Silicon Drift Detectors (SDD) are the state-of-the-art X-ray sensors for the energy range between 0.05 keV and 30 keV.
They are globally used in manifold applications in electron microscopes, XRF benchtop and XRF handheld spectrometers as well as in material sorting systems for mining and recycling. Due to their wide operating temperature range, their excellent energy resolution, and high reliability they are particularly suited for industrial applications.

VITUS SDD Series

High-performing Silicon Drift Detectors with collimated areas from 7 mm² to 150 mm² for XRF and EDS applications in industry and science.

VITUS H7-H30

Compact SDD modules with 7 mm², 20 mm² and 28 mm² collimated area and bevelled can

VITUS H50/K50

SDDs with 47 mm² collimated area and 450 µm respectively 550 µm active Si thickness

VITUS H80/H150

Large area SDDs with 80 mm² and 143 mm² collimated area enabling a wide solid angle

Available Options

CH Window
Standard
CL Window
Low Energy

CH Window

1 µm Carbon, replacing 8 µm or 12.5 µm Beryllium
Vacuum encapsulated for many years of stable operation
No window fluorescence lines (pure Carbon)

CL Window

Low-energy type
165 nm Carbon with Silicon support grid
86 % open area
Very high 100° acceptance angle (typical Polymer window: 53°)
Vacuum encapsulated for many years of stable operation
No window fluorescence lines (pure Carbon)

Cooling Performance

KETEK’s R&D team constantly works on improving VITUS SDDs. The latest generation 3.0 has an improved cooling performance with a significantly lower power consumption and an excellent long-term stability.

∆T from 90 K to 130 K depending on heat sink temperature
Less than 250 mW power consumption at typical operation point (-35 °C chip temperature)
Power consumption as low as 100 mW possible at 20 °C heat sink and -20 °C chip temperature
Ultra-stable vacuum integrity for typically more than 10 years of operation

KETEK Proprietary Charge Sensitive Amplifier

The overall performance of a SDD module highly depends on the first amplification stage. To get excellent results all VITUS SDD modules are equipped with KETEK’s outstanding first stage ultra-low noise charge sensitive amplifier CSA.

Significantly improved energy resolution, especially at short peaking times
Extremely high throughput at appropriate DPP settings

KETEK Charge Sensitive Amplifier CSA versus Conventional ASIC

Overview all VITUS SDDs

	H7 CH/CL	H20 CH/CL	H30 CH/CL	H50/K50 CH/CL	H80	H150

COLLIMATED AREA [mm²]	7	20	28	47	80	143
ACTIVE AREA [mm²]	13	30	41	65	100	170

Download Product Information

Specifications

Specifications for H7-H150
First stage amplification	ASIC
Energy resolution for H7-H50 and K50 Energy resolution for H80-H150	≤ 129 eV @ Mn K_α ≤ 136 eV @ Mn K_α
Peak to background	> 15,000
Peak to tail	> 2,000
Optimal peaking time at max. cooling	1 μs
Absorption depth Si for H7 to H150 Absorption depth Si for K50	450 µm 550 µm
Peak shift stability up to 100 kcps	< 1 eV
Max. input count rate	4,000 kcps
Window for H7-H50 CH and K50 CH Window for H7-H50 CL and K50 CL Window for H80-H150	CH (1 µm Graphene) CL (165 nm Graphene) Be (25 µm Beryllium)
Cooling performance	@ +20 °C heat sink ΔT > 95 K
On-chip collimator	multilayer

Typical SDD parameters	Voltages	Currents
Ring 1 (R1)	-20 V ± 10 V	10 µA
Ring X (RX)	-130 V ± 30 V	10 µA
Back	-80 V ± 20 V	< 1 nA
Peltier element for H7-H50 and K50	5.5 V	600 mA max.
Peltier element for H80-H150	9 V	1,000 mA max.
Temperature monitor	NTC thermistor 10 kΩ @ 25 °C
Output signal	ramped reset type
Output gain	1.6 mV/keV ± 20 %