VITUS SDD Modules 2017-05-31T07:59:26+00:00

VITUS
Modules

KETEK’s VITUS Silicon Drift Detectors (SDD) are the state-of-the-art X-ray detectors based on siliconsubstrate. Their typical X-ray energy range is between 0.2 keV and 30 keV. They are used in applications such as EDX, EDS, XRF, TXRF in bench top as well as in handheld based systems. Due to their wide operating temperature range they are especially suited for industrial applications.

Outstanding performance

Spectrum acquired with VITUS SDD at 1 µs peaking time.
Energy resolution FWHM down to 126 eV for Mn Kα at 1 µs peaking time.
Spectrum acquired with VITUS SDD at 3 µs peaking time.
Energy resolution FWHM down to 123 eV for Mn Kα at 3 µs peaking time.

Low-energy spectrum with FWHM of 42 eV for C Kα

Spectrum showing the outstanding performance of the VITUS SDDs in low-energy regime. FWHM of 42 eV for C Kα line.

Unprecedented low-energy performance down to Li @ 53 eV

Low-energy spectrum acquired with VITUS SDD showing the Li and O Kα lines.

Low-energy spectrum with Li, C, N, and O lines

Product Portfolio

C = CUBE classP = Premium FET classS = Standard FET class
class VITUS H7H7 VITUS H20H20 VITUS H30H30 VITUS H50H50 VITUS H80H80 VITUS H150H150 VITUS H7LEH7LE VITUS H18LEH18LE
COLLIMATED AREA (mm2) 7 20 30 50 80 150 7 18
ACTIVE AREA (mm2) 10 30 40 65 109 170 10 30
WINDOW 8 μm Be 8 μm Be 8 μm Be 12.5 μm Be 25 μm Be 25 μm Be AP3.3 polymer AP3.3 polymer
COOLING PERFORMANCE MAX Δ T @ 20°C HEAT SINK 75 75 75 75 75 90 55 55
AMPLIFICATION STAGE C ASIC ASIC ASIC ASIC ASIC ASIC ASIC ASIC
P JFET JFET JFET JFET JFET n.a. JFET JFET
S JFET JFET JFET JFET JFET n.a. JFET JFET
OPTIMAL PEAKING TIME AT MAX. COOLING C 1 μs 1 μs 1 μs 1 μs 1 μs 1 μs 1 μs 1 μs
P 8 μs 8 μs 8 μs 8 μs 8 μs n.a. 8 μs 8 μs
S 8 μs 8 μs 8 μs 8 μs 8 μs n.a. 8 μs 8 μs
GUARANTEED FWHM at MnKα (5.9 keV) [eV] C ≤ 129 ≤ 129 ≤ 129 ≤ 129 ≤ 136 ≤ 136 ≤ 133 ≤ 136
P ≤ 129 ≤ 129 ≤ 129 ≤ 129 ≤ 136 n.a. ≤ 133 ≤ 136
S ≤ 139 ≤ 139 ≤ 139 ≤ 139 ≤ 160 n.a. ≤ 139 ≤ 144
GUARANTEED P/B C > 15,000 > 15,000 > 15,000 > 15,000 > 15,000 > 15,000 > 10,000 > 10,000
P > 15,000 > 15,000 > 15,000 > 15,000 > 15,000 n.a. > 10,000 > 10,000
S > 6,000 > 6,000 > 6,000 > 6,000 > 6,000 n.a. > 6,000 > 6,000
GUARANTEED P/T C > 2,000 > 2,000 > 2,000 > 2,000 > 2,000 > 2,000 > 2,000 > 2,000
P > 2,000 > 2,000 > 2,000 > 2,000 > 2,000 n.a. > 2,000 > 2,000
S > 1,000 > 1,000 > 1,000 > 1,000 > 1,000 n.a. > 1,000 > 1,000
ABSORPTION DEPTH Si 450 μm 450 μm 450 μm 450 μm 450 μm 450 μm 450 μm 450 μm
PEAK SHIFT STABILITY UP TO 100 kcps < 1 eV < 1 eV < 1 eV < 1 eV < 1 eV < 1 eV < 1 eV < 1 eV
MAX. INPUT COUNT RATE C 2,000 kcps 2,000 kcps 2,000 kcps 2,000 kcps 2,000 kcps 2,000 kcps 2,000 kcps 2,000 kcps
P 500 kcps 500 kcps 500 kcps 500 kcps 500 kcps n.a. 500 kcps 500 kcps
S 500 kcps 500 kcps 500 kcps 500 kcps 500 kcps n.a. 500 kcps 500 kcps
ON-CHIP COLLIMATOR multilayer multilayer multilayer multilayer multilayer multilayer palladium palladium
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Features

  • Energy resolution down to 123 eV FWHM at Mn-Kα
  • Excellent peak-to-background
  • Operable at an ambient temperature of up to +80 °C with excellent performance
  • High count rate capability up to 2,000 kcps
  • Efficient integrated Peltier element
  • No liquid nitrogen cooling required
  • Radiation hardness during more than 10 years standard count rate exposure
  • Collimated areas from 7 mm² to 150 mm² available

Functional Block Diagram

KETEK VITUS SDD functional block diagram

Applications

  • XRF
  • µ-XRF
  • EDX
  • EDS
  • TXRF
  • XRD
  • Handheld