VIAMP

The VIAMP preamplifier modules are specially designed printed circuit boards for operation with KETEK’s VITUS Silicon Drift Detectors (SDD). The assembly comprises an ultra-low noise, ramped reset type electronic preamplifier of positive polarity with onboard settings and filtering for all necessary SDD bias voltages.

Depending on the size and application of the SDD module, three standard Aluminum housing options are available for the electronic boards, which provide appropriate protection and serve as a sufficient heat sink.

VIAMP SDD Silicon Drift Detector with preamplifier

VIAMP-KL 3.0

VIAMP-KL 3.0 with a housing for large active area VITUS modules H80 and H150.

Unique Features

  • Designed for SDDs with large active area
  • Electrical interface fully compatible to the VIAMP-KC 3.0
  • Available with Be window
  • Flex lead connection lengths from 50 mm to 200 mm
  • Guaranteed energy resolution for Mn-Kα-line: FWHM < 136 eV @ 1 μs peaking time and −45 °C SDD chip temperature

Specifications

First amplification stage KETEK CSA
Energy resolution (@ Mn-Kα, -45 °C chip temperature and 1 µs peaking time) ≤ 136 eV
Peak to background > 10,000
Peak to tail > 2,000
Peak shift stability up to 100 kcps < 1 eV
Max. input countrate 1,000 kcps
Window 25 µm Beryllium
Cooling performance
at +20 °C heat sink temperature
∆T > 80 K

Spectrum

VIAMP-KL 3.0 H150 SDD Silicon Drift Detector Spectrum

The spectrum of a VIAMP-KL 3.0 with a VITUS H150 SDD has been acquired in KETEK’s standard end qualification test stand. The input count rate has been 50 kcps at a peaking time of 1 μs and a SDD chip temperature of -45 °C. The spectrum shows an excellent peak-to-background ratio and energy resolution for Mn-Kα.

Energy Resolution

VIAMP-KL 3.0 H150 SDD Silicon Drift Detector Energy Resolution FWHM

This plot shows the energy resolution for Mn-Kα measured with a VIAMP-KL 3.0 with a VITUS H150 SDD at different peaking times from 100 ns to 8 μs at a SDD chip temperature of -45 °C. The best set of parameters depend on the application optimizing either the energy resolution or the achievable through put.

Operating Parameters

Parameter Typical Maximum Ratings
Positive Power Supply DC +5 V
18 mA 
+4.9 V to +5.4 V
22 mA max
Negative Power Supply DC -5 V
8 mA
-5.4 V to -4.9 V
12 mA max
Output Signal Positive Ramp
Output Amplitude ±0.975 V ±0.95 Vpp,min
±1.0 Vpp,max
Output Gain * 5 mV/keV ±20 %
Gain Stability < 20 ppm/°C
External Reset (VICO-DV 3.0) 0 V or + 3.3 V
HV Supply DC -168 V
125 µA
±5 V
200 µA max 
TEC Supply DC 320 mA / 3.2 V @ -45 °C 1000 mA / 9.2 V
TEC ΔT > 80 K @ +20 °C heat sink temp.
Temp. Sensor 10 kΩ Thermistor @ +25 °C ≤ 1 μ
* other gain on request

Operation Block Diagram

VIAMP-KL 3.0 Operation Block Diagram

FFC connection

FFC Connection Cables

8-Pin FFC

VIAMP communication with VICO-DV 3.0 supply electronics

FFC Cable Length

The flat flexible cable is available in 50 mm, 100 mm and 200 mm length.

Pin Assignment 10-Pin FFC
Pin 1 TEC Return
Pin 2 TEC Supply
Pin 3 Positive Supply
Pin 4 Negative Supply
Pin 5 GND (Signal Return)
Pin 6 Signal Out
Pin 7 Temperature Sensor
Pin 8 GND
Pin 9 Not Connected
Pin 10 HV Supply

Geometry

VIAMP-KL 3.0 Geometry

Grounding and Thermal Scheme

VICO-DV 3.0 Grounding and Thermal Concept

The VIAMP needs to be mounted using a gap pad which is electrically isolated but thermally conductive, as the VIAMP housing functions as heat sink.

Temperature Read-out

VIAMP Thermistor Read-Out

The temperature of the SDD chip is determined by a thermistor with a resistance-temperature correlation according to the following equation:

VIAMP Thermistor Equation

VITUS SDDs

Different collimated areas and configurations of VITUS SDDs meeting various demands.

VITUS Silicon Drift Detector for X-RAY fluorescence spectroscopy

SDD Systems

Highly optimized components for an unprecedented performance.

VIAMP AXAS SDD Silicon Drift Detector Systems for X-Ray fluorescence spectroscopy