VITUS
H80

109 mm² collimated to 80 mm² X-ray Silicon Drift Detector for XRF – EDX – TXRF Applications

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VITUS H80 in TO housing with 25 µm Be window
Open VITUS H80 with on-chip multilayer collimator

Unique Features

Large collimated area of 80 mm²
Compact housing
Very large solid angle

KEY PARAMETERS
(Guaranteed Values)

**Table 1:** Beyond the guaranteed minimum key parameters shown in the table above, typical energy resolution of a VITUS H80 SDD is better than 133 eV. P/B is typically greater than 18,000.
	CUBE CLASS
First amplification stage	ASIC
Energy resolution	≤ 136 eV
Peak to background	> 15,000
Peak to tail	> 2,000
Optimal peaking time at max. cooling	1 µs
Absorption depth	450 µm Si
Peak shift stability up to 100 kcps	< 1 eV
Max. input countrate	2,000 kcps
Windows	25 µm Be
Cooling performance at +30°C heat sink temperature	∆T > 75 K
On-chip collimator	multilayer
Ordering codes	V5C9T0-H80-ML5BEV 136

Spectrum

Figure 1: The spectrum has been acquired in KETEK’s standard end qualification test stand with an Fe-55 source using an XIA Mercury signal processing unit. The input count rate has been 10 kcps at a peaking time of 1 µs. The spectrum shows a very good energy resolution for Mn-Kα and an excellent peak-to-background ratio.

Energy Resolution

Figure 2: Energy resolution (Mn-Kα) values for peaking times from 0.1 µs through 2 µs showing good FWHM values even for higher operating temperatures. Depending on the application the best performance can be achieved by an appropriate selection of peaking time and set operating temperature.

Figure 3: The VITUS H80 shows excellent energy resolution stability for different input count rates up to reasonable deadtimes at each peaking time. The data was measured at optimum cooling with an Fe-55 source using an XIA Mercury signal processing unit.

Throughput

Figure 4: The energy resolution of the VITUS H80 is dependent on both, the peaking time and the operating temperature. Depending on the application the best performance can achieved by an appropriate selection of peaking time and set operating temperature.

Control Range

Figure 5: The VITUS H80 can be operated at high ambient temperatures. The control range is given by the blue shaded area. Up to 80°C heat sink temperature the SDD can be operated stable at -20°C chip temperature without secondary cooling stage

OPERATION REQUIREMENTS

SDD Voltages and Currents

Ring1 (R1)	-20 V ± 5 V	10 µA typ.
RingX (RX)	-130 V ± 20 V	10 µA typ.
Back	-60 V ± 5 V	< 1 nA
Peltier Element	4.5 V	1000 mA max.

General parameters

Temperature Monitor	NTC thermistor	10 kΩ @ 25 °C
Output signal	ramped reset type	–

CUBE based SDDs

V_I/O	3.3 V ± 0.1 V	< 1 mA
V_s	2 V ± 0.1 V	< 1 mA
V_sss	-5 V ± 0.1 V	< 1 mA
Output gain	1.6 mV/keV ± 20 %	–

Operation

Pin wiring according to VITUS Operation Block Diagram
Detector operating voltages should be RC low-pass filtered and linearly regulated (KETEK electronics recommended)
KETEK reset type charge sensitive pre-amplifier with internal triggered reset pulses recommended
Short wiring length between detector and pre-amplifier recommended
Detector may only be operated with an appropriate heat sink