VITUS
H50
65 mm² collimated to 50 mm² X-ray Silicon Drift Detector for XRF – EDX – TXRF Applications
Unique Features
- 12.5 µm Be-Window
- High performance module
- Largest area in ultra compact TO8 housing
KEY PARAMETERS
(Guaranteed Values)
CUBE CLASS |
|
---|---|
First amplification stage | ASIC |
Energy resolution | ≤ 129 eV |
Peak to background | > 15,000 |
Peak to tail | > 2,000 |
Optimal peaking time at max. cooling | 1 µs |
Absorption depth | 450 µm Si |
Peak shift stability up to 100 kcps | < 1 eV |
Max. input countrate | 2,000 kcps |
Windows | 12.5 µm Be |
Cooling performance at +30°C heat sink temperature |
∆T > 75 K |
On-chip collimator | multilayer |
Ordering codes | V5C2T0-H50-ML9BEV 129 |
Spectrum
Figure 1: The spectrum has been acquired in KETEK’s standard end qualification test stand with an Fe-55 source using an XIA Mercury signal processing unit. The input count rate has been 10 kcps at a peaking time of 1 µs. The spectrum shows a very good energy resolution for Mn-Kα and an excellent peak-to-background ratio.
Energy Resolution
Figure 2: Energy resolution (Mn-Kα) values for peaking times from 0.1 µs through 8 µs showing good FWHM values even for higher operating temperatures. Depending on the application the best performance can be achieved by an appropriate selection of peaking time and set operating temperature.
Figure 3: The VITUS H50 shows excellent energy resolution stability for different input count rates up to reasonable deadtimes at each peaking time. The data was measured at optimum cooling witKetek Vitus SDD H50 Energy Resolution vs. Input Count Rate for different Peaking Times an Fe-55 source using an XIA Mercury signal processing unit.
OPERATION REQUIREMENTS
SDD Voltages and Currents
Ring1 (R1) | -20 V ± 5 V | 10 µA typ. |
---|---|---|
RingX (RX) | -130 V ± 20 V | 10 µA typ. |
Back | -60 V ± 5 V | < 1 nA |
Peltier Element | 3.6 V | 700 mA max. |
General parameters
Temperature Monitor | NTC thermistor | 10 kΩ @ 25 °C |
---|---|---|
Output signal | ramped reset type | – |
CUBE based SDDs
VI/O | 3.3 V ± 0.1 V | < 1 mA |
---|---|---|
Vs | 2 V ± 0.1 V | < 1 mA |
Vsss | -5 V ± 0.1 V | < 1 mA |
Output gain | 1.6 mV/keV ± 20 % | – |