VITUS
H7

10 mm² collimated to 7 mm² X-ray Silicon Drift Detectors for XRF – EDX – TXRF – Applications

Loading...

VITUS H7 in TO8 housing with 8 µm Be window
Open VITUS H7 with on-chip multilayer collimator

Unique Features

Basic module with high count rate capability
High operating temperatures up to 0°C
Low energy module available

KEY PARAMETERS
(Guaranteed Values)

**Table 1:** Beyond the guaranteed minimum key parameters shown in the table above, typical energy resolution of a VITUS H7 SDD is better than 128eV. P/B is typically greater than 18,000.
	CUBE CLASS
First amplification stage	ASIC
Energy resolution	≤ 129 eV
Peak to background	> 15,000
Peak to tail	> 2,000
Optimal peaking time at max. cooling	1 µs
Absorption depth	450 µm Si
Peak shift stability up to 100 kcps	< 1 eV
Max. input countrate	2,000 kcps
Windows	8 µm Be
Cooling performance at +30°C heat sink temperature	∆T > 75 K
On-chip collimator	multilayer
Ordering codes	V5C2T0-H7-ML1BEV 129

Spectrum

Figure 1: The spectrum has been acquired in KETEK’s standard end qualification test stand with an Fe-55 source using an XIA Mercury signal processing unit. The input count rate has been 10 kcps at a peaking time of 1 µs. The spectrum shows a very good energy resolution for Mn-Kα and an excellent peak-to-background ratio.

Energy Resolution

Figure 2: Energy resolution (Mn-Kα) values for peaking times from 0.1µs through 8 µs showing good FWHM values even for higher operating temperatures. Depending on the application the best performance can be achieved by an appropriate selection of peaking time and set operating temperature.

Figure 3: The VITUS H7 shows excellent energy resolution stability for different input count rates up to reasonable deadtimes at each peaking time. The data was measured at optimum cooling with an Fe-55 source using an XIA Mercury signal processing unit.

Throughput

Figure 4: The achievable VITUS H7 throughput is mainly influenced by the applied signal processing electronics. The shown data has been allocated with an XIA Mercury digital pulse processor which yields in an excellent throughput performance.

Control Range

Figure 5: The VITUS H7 can be operated at high ambient temperatures. The control range is given by the blue shaded area. Up to 80°C heat sink temperature the SDD can be operated stable at -20°C chip temperature without secondary cooling stage.

OPERATION REQUIREMENTS

SDD Voltages and Currents

Ring1 (R1)	-20 V ± 5 V	10 µA typ.
RingX (RX)	-130 V ± 20 V	10 µA typ.
Back	-60 V ± 5 V	< 1 nA
Peltier Element	3.6 V	700 mA max.

General parameters

Temperature Monitor	NTC thermistor	10 kΩ @ 25 °C
Output signal	ramped reset type	–

CUBE based SDDs

V_I/O	3.3 V ± 0.1 V	< 1 mA
V_s	2 V ± 0.1 V	< 1 mA
V_sss	-5 V ± 0.1 V	< 1 mA
Output gain	1.6 mV/keV ± 20 %	–

Operation

Pin wiring according to VITUS Operation Block Diagram
Detector operating voltages should be RC low-pass filtered and linearly regulated (KETEK electronics recommended)
KETEK reset type charge sensitive pre-amplifier with internal triggered reset pulses recommended
Short wiring length between detector and pre-amplifier recommended
Detector may only be operated with an appropriate heat sink