KETEK
VITUS H80 in TO housing with 25 µm Be window
VITUS H80 in TO housing with 25 µm Be window
Open VITUS H80 with on-chip multilayer collimator
Open VITUS H80 with on-chip multilayer collimator

Vitus H80

109 mm² collimated to 80 mm²
X-ray Silicon Drift Detector for 
XRF – EDX – TXRF Applications

Unique Features

  • Large active area of 80 mm²
  • Compact housing
  • Very large solid angle

Key Parameters (Guaranteed Values)

Class
Premium
Standard

Energy resolution

 136 eV

 160 eV

Peak to Background

> 15000

> 6000

Peak to Tail 

> 1000

> 1000

Absorption depth

450 µm Si

Peak shift stability up to 100 kcps

< 1eV

Max. input countrate

500 kcps

Window         

25 µm Be

Cooling performance
at +30°C heat sink temperature

∆T > 75K

On-chip collimator 

multilayer

Ordering codes

V5F9T0-H80-ML5BEV 136

V5F9T0-H80-ML5BEV 160

Table 1: Beyond the guaranteed minimum key parameters shown in the table above, typical energy resolution of a Premium Class VITUS H80 SDD is better than 133eV. P/B is typically greater than 15,000.

Spectrum

VITUS H80 Silicon Drift Detector

Figure 1: The spectrum has been acquired in KETEK's standard end qualification test stand with an Fe-55 source using an XIA Mercury signal processing unit. The input count rate has been 10 kcps at a measurement time of 500s. The spectrum shows a very good energy resolution for Mn-Ka and an excellent peak-to-background ratio.

Energy Resolution

Energy Resolution - VITUS H80 Silicon Drift Detector

Figure 2: Energy resolution (Mn-Ka) values for peaking times from 0.2µs through 16µs showing good FWHM values even for higher operating temperatures. Depending on the application the best performance can be achieved by an appropriate selection of peaking time and set operating temperature.

Input Count Rate - VITUS H80 Silicon Drift Detector

Figure 3: The VITUS H80 shows excellent energy resolution stability for different input count rates up to reasonable deadtimes at each peaking time. The data was measured at optimum cooling with an Fe-55 source using an XIA Mercury signal processing unit.

Throughput

Throughput - VITUS H80 Silicon Drift Detector

Figure 4: The energy resolution of the VITUS H80 is dependent on both, the peaking time and the operating temperature. Depending on the application the best performance can achieved by an appropriate selection of peaking time and set operating temperature.

Control Range

VITUS H80 Silicon Drift Detector Control Range

Figure 5: The VITUS H80 can be operated at high ambient temperatures. The control range is given by the blue shaded area. Up to 80°C heat sink temperature the SDD can be operated stable at -20°C chip temperature without secondary cooling stage.

Operation Requirements

SDD Voltages and Currents

Ring1 (R1)

-20 V ± 5 V

10 µA typ.

RingX (RX)

-130 V ± 20 V

10 µA typ.

Back

-60 V ± 5 V

<1 nA

Included FET

Drain

3 V ± 0.5 V

3 mA

Source

0 V

Bulk

-5 V ± 3 V

Reset

1 V

1 µs

Feedback

ramped output


Peltier Element

4.5 V

1 A max.


Temperature Monitor

NTC thermistor

10 kΩ @ 25 °C

Pin Assignment and Geometry

VITUS H7LE Pin Assignment
VITUS H80 Geometry

Figure 6: Pin Assignment and Geometry

Operation – Easy to Use

VITUS Operation Block Diagram
Figure 7: VITUS Operation Block Diagram

  • Pin wiring according VITUS Operation Block Diagram
  • Detector operating voltages should be RC low-pass filtered and linearly regulated (KETEK electronics recommended)
  • KETEK reset type charge sensitive pre-amplifier with internal triggered reset pulses recommended
  • Short wiring length between detector and pre-amplifier recommended
  • Detector may only be operated with an appropriate heat sink

Available Signal Processing Electronics and Accessories

  • AXAS-M complete acquisition system
  • Pre-amplifier
  • Digital Pulse Processor (DPP)
  • Clip-on protection cap with external multilayer collimator

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