VITUS H50 in TO8 housing with 12.5 µm Be window
VITUS H50 in TO8 housing with 12.5 µm Be window
Open VITUS H50 with on-chip multilayer collimator
Open VITUS H50 with on-chip multilayer collimator

Vitus H50

65 mm² collimated to 50 mm²
X-ray Silicon Drift Detector for 
XRF – EDX – TXRF Applications

Unique Features

  • Largest area in ultra compact TO8 housing
  • 12.5µm Be-Window
  • High performance module

Key Parameters (Guaranteed Values)


Energy resolution

 129 eV

 139 eV

Peak to Background

> 15000

> 6000

Peak to Tail 

> 2000

> 1000

Absorption depth

450 µm Si

Peak shift stability up to 100 kcps

< 1eV

Max. input countrate

1000 kcps


12.5 µm Be

Cooling performance
at +30°C heat sink temperature

∆T > 75K

On-chip collimator 


Ordering codes

V5F2T0-H50-ML9BEV 129

V5F2T0-H50-ML9BEV 139

Table 1: Beyond the guaranteed minimum key parameters shown in the table above, typical energy resolution of a Premium Class VITUS H50 SDD is better than 128eV. P/B is typically greater than 18,000. 


VITUS H50 Silicon Drift Detector

Figure 1: The spectrum has been acquired in KETEK's standard end qualification test stand with an Fe-55 source using an XIA Mercury signal processing unit. The input count rate has been 10 kcps at a measurement time of 500s. The spectrum shows a very good energy resolution for Mn-Ka and an excellent peak-to-background ratio.

Energy Resolution

Energy Resolution - VITUS H50 Silicon Drift Detector

Figure 2: Energy resolution (Mn-Ka) values for peaking times from 0.1µs through 8µs showing good FWHM values even for higher operating temperatures. Depending on the application the best performance can be achieved by an appropriate selection of peaking time and set operating temperature.

Energy vs. Input Count Rate - VITUS H50 Silicon Drift Detector

Figure 3: The VITUS H50 shows excellent energy resolution stability for different input count rates up to reasonable deadtimes at each peaking time. The data was measured at optimum cooling with an Fe-55 source using an XIA Mercury signal processing unit.


Throughput - VITUS H50 Silicon Drift Detector

Figure 4: The achievable VITUS H50 throughput is mainly influenced by the applied signal processing electronics. The shown data has been allocated with an XIA Mercury digital pulse processor which yields in an excellent throughput performance.

Control Range

VITUS H50 Silicon Drift Detector Control Range

Figure 5: The VITUS H50 can be operated at high ambient temperatures. The control range is given by the blue shaded area. Up to 80°C heat sink temperature the SDD can be operated stable at -20°C chip temperature without secondary cooling stage.

Operation Requirements

SDD Voltages and Currents

Ring1 (R1)

-20 V ± 5 V

10 µA typ.

RingX (RX)

-130 V ± 20 V

10 µA typ.


-60 V ± 5 V

<1 nA

Included FET


3 V ± 0.5 V

3 mA


0 V


-5 V ± 3 V


1 V

1 µs


ramped output

Peltier Element

3.6 V

700 mA max.

Temperature Monitor

NTC thermistor

10 kΩ @ 25 °C

Pin Assignment and Geometry

VITUS H7 Pin Assignment
VITUS H50 Geometry

Figure 6: Pin Assignment and Geometry

Operation – Easy to Use

VITUS Operation Block Diagram
Figure 7: VITUS Operation Block Diagram

  • Pin wiring according VITUS Operation Block Diagram
  • Detector operating voltages should be RC low-pass filtered and linearly regulated (KETEK electronics recommended)
  • KETEK reset type charge sensitive pre-amplifier with internal triggered reset pulses recommended
  • Short wiring length between detector and pre-amplifier recommended
  • Detector may only be operated with an appropriate heat sink

Available Signal Processing Electronics and Accessories

  • AXAS-A
  • AXAS-D
  • AXAS-M
  • Pre-amplifier
  • Digital Pulse Processor (DPP)
  • Clip-on protection cap with external multilayer collimator

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