KETEK
VITUS H18LE in TO8 housing with AP3.3 polymer window
VITUS H18LE in TO8 housing with AP3.3 polymer window
Open VITUS H18LE with on-chip Pd collimator
Open VITUS H18LE with on-chip Pd collimator

Vitus H18LE

 

30 mm² collimated to 18 mm²
X-ray Silicon Drift Detector
for Low-Energy
XRF – EDX – TXRF Applications

Unique Features

  • Large area low-energy module
  • Ultra thin polymer window
  • Sensitive down to Boron K at 185eV

Key Parameters  (Guaranteed Values)

Class
Premium
Standard

FWHM Mn K (5.9 keV)

 136 eV

 144 eV

FWHM C K (277 eV)

 70 eV

≤ 80 eV

Peak to Background

> 10000

> 6000

Peak to Tail 

> 2000

> 1000

Absorption depth

450 µm Si

Peak shift stability up to 100 kcps

< 1eV

Max. input countrate

500 kcps

Windows                

AP3.3 Polymer

Cooling performance
at +20°C heat sink temperature

∆ > 55K

On-chip collimator 

Pd

Ordering codes

V5F7T0-H18-PD3APN 136

V5F7T0-H18-PD3APN 144

Table 1: Beyond the guaranteed minimum key parameters shown in the table above, typical energy resolution of a Premium Class VITUS H18LE SDD is better than 133eV. P/B is typically greater than 15,000.

Spectrum

Vitus H18LE Silicon Drift Detector

Figure 1: The spectrum has been acquired in KETEKs standard end qualification test stand with an Fe-55 source using an XIA Mercury signal processing unit. The input count rate has been 10 kcps at a measurement time of 500s. The spectrum shows a very good energy resolution for Mn-Ka and an excellent peak-to-background ratio.

Energy Resolution

Vitus H18LE Silicon Drift Detector - Energy Resolution

Figure 2: The energy resolution of the VITUS H18LE is dependent on both, the peaking time and the operating temperature. Depending on the application the best performance can achieved by an appropriate selection of peaking time and set operating temperature.

Vitus H18LE Silicon Drift Detector - Peaking time

Figure 3: The VITUS H18LE shows excellent energy resolution stability for different input count rates up to reasonable deadtimes at each peaking time. The data was measured at optimum cooling with an Fe-55 source using an XIA Mercury signal processing unit.

Operation Requirements

SDD Voltages and Currents

Ring1 (R1)

-20 V ± 5 V

10 µA typ.

RingX (RX)

-130 V ± 20 V

10 µA typ.

Back

-60 V ± 5 V

<1 nA

Included FET

Drain

3 V ± 0.5 V

3 mA

Source

0 V

Bulk

-5 V ± 3 V

Reset

1 V

1 µs

Feedback

ramped output


Peltier Element

4.0 V

1 A max


Temperature Monitor

slope 2.40 mV/K 520 mV @ +20 °C

1 µA

Pin Assignment and Geometry

Pin Assignment - Vitus H18LE Silicon Drift Detector
Geometry - Vitus H18LE Silicon Drift Detector

Figure 4: Pin Assignment and Geometry

Operation – Easy to Use

VITUS Operation Block Diagram
Figure 5: VITUS Operation Block Diagram

  • Pin wiring according VITUS Operation Block Diagram
  • Detector operating voltages should be RC low-pass filtered and linearly regulated (KETEK electronics recommended)
  • KETEK reset type charge sensitive pre-amplifier with internal triggered reset pulses recommended
  • Short wiring length between detector and pre-amplifier recommended
  • Detector may only be operated with an appropriate heat sink

Available Signal Processing Electronics and Accessories

  • AXAS-A
  • AXAS-D
  • AXAS-M
  • Pre-amplifier
  • Digital Pulse Processor (DPP)
  • Clip-on protection cap with external multilayer collimator

Table of Contents