Products | Vitus H80 SDD

100 mm² collimated to 80 mm²
X-Ray Silicon Drift Detectors for
EDX  -  XRF  -  TXRF  -  Applications

KEY PARAMETERS VITUS H80

ClassPremiumStandard
Energy Resolution< 139 eV< 160 eV
Peak to Background> 5000> 3000
Peak to Tail > 1000> 500
Absorption Depth          450 µm Si
Peak Shift Stability
up to 100 kcps
          
            < 1eV
Max. input countrate          500.000 cps
Windows                          25 µm Be
Cooling Performance         ∆T > 75 K
Collimator Materials        Zr - Pd - Mo
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State of the Art Detector for Your Application
VITUS H80 SDD
VITUS H80 SDD

Spectrum

  • low capacitance
  • very good energy resolution
  • high count rate capability up to 500kcps
  • integrated peltier element
  • no liquid nitrogen cooling
  • low leakage current
  • radiation hardness during more than
    10 years standard count-rate exposure
  • "easy to use" - no voltage adjustment

VITUS H80 SDD

Energy Resolution

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The energy resolution of the VITUS H80 SDD is dependent on the operating temperature and the shaping time. To achieve good results, KETEK recommends an operating temperature below -20°C. Typical operating conditions are -35°C and an analog shaping time of 4 µs.

The temperature dependency is more significant for longer shaping times.

Finding the optimum operating conditions depends very much on ambient temperature and count rate for the specific application.

VITUS H80 SDD

Count Rates

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The VITUS H80 SDD detector offers a high count rate capability up 500 kcps with weak FWHM dependency as shown in the graph for different analogue shaping times.

The data of the example plot has been acquired with a VITUS H80 Standard Class detector at an operating temperature of -35°C.

The plots show values up to the maximum reasonable dead time of 60%.

VITUS H80 SDD

Operation

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  • pin wiring according VITUS Operation Block Diagram
  • detector operating voltages should be RC low-pass filtered and linear regulated (KETEK electronics recommended)
  • KETEK reset type charge sensitive preamplifier with internal triggered reset pulses recommended
  • short wiring length between detector and preamplifier recommended
  • detector may only be operated with an appropriate heat sink

VITUS H80 SDD Operation Block Diagram
VITUS Operation Block Diagram

SDD Voltage and Current Requirements

Operation Requirements
SDD Voltages and Currents
Ring1 (R1)  -20 V ± 5 V 10 µA typ.
RingX (RX)  -130 V ± 20 V 10 µA typ.
Back  -60 V ± 5 V <1 nA

Voltage Requirements of the included FET

Operation Requirements
Included FET
Drain 3 V ± 0.5 V  3 mA
Source 0 V
Bulk -5 V ± 3 V
Reset 1 V  1 µs
Feedback ramped output

Operation of TEC and Temperature Monitor

Operation Requirements
Peltier Element 4 V 1 A max
Temperature Monitor slope 2.40 mV/K
520 mV @ +20°C
1 µA

VITUS H80 Pin Assignment
VITUS H80 SDD Pin Assignment

 


Geometries

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The VITUS H80 SDD is encapsulated with a non-bevelled cap. The used stainless steel housing can be easily mounted by the M4 stud. 

VITUS H80 Detector Geometry
VITUS H80 Detector Geometry

Versions and Ordering Codes

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Available versions and ordering codes for VITUS H80 SDD:

The vacuum type codes end with a 'V' - e.g. 139V

VITUS H80 version and ordering codes

Accessories

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Available KETEK Signal Processing Electronics