Vitus H80
109 mm² collimated to 80 mm²
X-ray Silicon Drift Detector for
XRF – EDX – TXRF Applications
Unique Features
- Largest SDD area available
- Compact housing
- Very large solid angle
Key Parameters (Guaranteed Values) | ||
Class | Premium | Standard |
Energy resolution | ≤ 136 eV | ≤ 160 eV |
Peak to Background | > 10000 | > 5000 |
Peak to Tail | > 1000 | > 1000 |
Absorption depth | 450 µm Si | |
Peak shift stability up to 100 kcps | < 1eV | |
Max. input countrate | 500 kcps | |
Window | 25 µm Be | |
Cooling performance | ∆T > 75K | |
On-chip collimator | multilayer | |
Ordering codes | V5F9T0-H80-ML5BEV 136 | V5F9T0-H80-ML5BEV 160 |
Table 1: Beyond the guaranteed minimum key parameters shown in the table above, typical energy resolution of a Premium Class VITUS H80 SDD is better than 133eV. P/B is typically greater than 15,000.
Spectrum
Figure 1: The spectrum has been acquired in KETEKs standard end qualification test stand with an Fe-55 source using an XIA Mercury signal processing unit. The input count rate has been 10 kcps at a measurement time of 500s. The spectrum shows a very good energy resolution for Mn-Ka and an excellent peak-to-background ratio.
Energy Resolution
Figure 2: Energy resolution (Mn-Ka) values for peaking times from 0.2µs through 16µs showing good FWHM values even for higher operating temperatures.
Figure 3: The VITUS H80 shows excellent energy resolution stability for different input count rates up to reasonable deadtimes at each peaking time. The data was measured at optimum cooling with an Fe-55 source using an XIA Mercury signal processing unit.
Throughput
Figure 4: The energy resolution of the VITUS H80 is dependent on both, the peaking time and the operating temperature. Depending on the application the best performance can achieved by an appropriate selection of peaking time and set operating temperature.
Control Range
Figure 5: The VITUS H80 can be operated at high ambient temperatures. The control range is given by the blue shaded area. Up to 80°C heat sink temperature the SDD can be operated stable at -20°C chip temperature without secondary cooling stage.
Operation Requirements
SDD Voltages and Currents | ||
Ring1 (R1) | -20 V ± 5 V | 10 µA typ. |
RingX (RX) | -130 V ± 20 V | 10 µA typ. |
Back | -60 V ± 5 V | <1 nA |
Included FET | ||
Drain | 3 V ± 0.5 V | 3 mA |
Source | 0 V | |
Bulk | -5 V ± 3 V | |
Reset | 1 V | 1 µs |
Feedback | ramped output |
Peltier Element | 4.5 V | 1 A max. |
Temperature Monitor | NTC thermistor | 10 kΩ @ 25 °C |
Pin Assignment and Geometry
Figure 6: Pin Assignment and Geometry
Operation – Easy to Use
- Pin wiring according VITUS Operation Block Diagram
- Detector operating voltages should be RC low-pass filtered and linearly regulated (KETEK electronics recommended)
- KETEK reset type charge sensitive pre-amplifier with internal triggered reset pulses recommended
- Short wiring length between detector and pre-amplifier recommended
- Detector may only be operated with an appropriate heat sink
Available Signal Processing Electronics and Accessories
- AXAS-M complete acquisition system
- Pre-amplifier
- Digital Pulse Processor (DPP)
- Clip-on protection cap with external multilayer collimator
