KEY PARAMETERS VITUS H80 | ||
| Class | Premium | Standard |
| Energy Resolution | < 139 eV | < 160 eV |
| Peak to Background | > 5000 | > 3000 |
| Peak to Tail | > 1000 | > 500 |
| Absorption Depth | 450 µm Si | |
| Peak Shift Stability up to 100 kcps | < 1eV | |
| Max. input countrate | 500.000 cps | |
| Windows | 25 µm Be | |
| Cooling Performance | ∆T > 75 K | |
| Collimator Materials | Zr - Pd - Mo | |
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The energy resolution of the VITUS H80 SDD is dependent on the operating temperature and the shaping time. To achieve good results, KETEK recommends an operating temperature below -20°C. Typical operating conditions are -35°C and an analog shaping time of 4 µs.
The temperature dependency is more significant for longer shaping times.
Finding the optimum operating conditions depends very much on ambient temperature and count rate for the specific application.
The VITUS H80 SDD detector offers a high count rate capability up 500 kcps with weak FWHM dependency as shown in the graph for different analogue shaping times.
The data of the example plot has been acquired with a VITUS H80 Standard Class detector at an operating temperature of -35°C.
The plots show values up to the maximum reasonable dead time of 60%.
| SDD Voltages and Currents | ||
|---|---|---|
| Ring1 (R1) | -20 V ± 5 V | 10 µA typ. |
| RingX (RX) | -130 V ± 20 V | 10 µA typ. |
| Back | -60 V ± 5 V | <1 nA |
| Included FET | ||
|---|---|---|
| Drain | 3 V ± 0.5 V | 3 mA |
| Source | 0 V | |
| Bulk | -5 V ± 3 V | |
| Reset | 1 V | 1 µs |
| Feedback | ramped output | |
| Peltier Element | 4 V | 1 A max |
|---|---|---|
| Temperature Monitor | slope 2.40 mV/K 520 mV @ +20°C |
1 µA |
The VITUS H80 SDD is encapsulated with a non-bevelled cap. The used stainless steel housing can be easily mounted by the M4 stud.
Available versions and ordering codes for VITUS H80 SDD:
The vacuum type codes end with a 'V' - e.g. 139V