Products | VITUS H50 SDD

65 mm² collimated to 50 mm²
X-Ray Silicon Drift Detectors for
EDX, XRF AND TXRF Applications

KEY PARAMETERS VITUS H50

ClassPremiumStandard
Energy Resolution<133eV<139eV
Peak to Background>10000>6000
Peak to Tail >2000>1000
Absorption Depth          450µm Si
Peak Shift Stability
up to 100 kcps		          
           <1eV
Max. input countrate         500kcps
Windows                       12.5µm Be
Cooling Performance       ∆T > 75 K
Collimator Materials       multilayer
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State of the Art Detector for Your Application
VITUS H50 SDD

Short Facts

  • low capacitance
  • very good energy resolution
  • high count rate capability up to 500kcps
  • integrated Peltier element
  • no liquid nitrogen cooling
  • low leakage current
  • radiation hardness during more than
    10 years standard count-rate exposure
  • 'easy to use' - no voltage adjustment


Energy Resolution

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The energy resolution of the VITUS H50 SDD is dependent on the operating temperature and the shaping time. To achieve good results KETEK recomends an operating temperature below -20°C. Typical operating conditions are -35°C and an analogue shaping time of 4µs.

The temperature dependency is more significant for longer shaping times.

Finding the optimum operating conditions depends very much on ambient temperature and count rate for the specific application.


Count Rates

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The VITUS H50 SDD offers a high count rate capability up to 500kcps with weak FWHM dependency as shown in the graph for different analogue shaping times.

The data of the example plot has been acquired with a VITUS H50 Standard Class detector at an operating temperature of -55°C.

The plot shows values up to the maximum reasonable dead time of 55%.


Operation

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  • pin wiring according VITUS operation block diagram
  • detector operating voltages should be RC low-pass filtered and linear regulated (KETEK electronics recommended)
  • KETEK reset type charge sensitive preamplifier with internal triggered reset pulses recommended
  • short wiring length between detector and preamplifier recommended
  • detector may only be operated with an appropriate heat sink

VITUS operation block diagram
VITUS operation block diagram

SDD Voltage and Current Requirements

operation requirements
SDD voltages and currents
Ring1 (R1)  -20 V ± 5 V 10 µA typ.
RingX (RX)  -130 V ± 20 V 10 µA typ.
Back  -60 V ± 5 V <1 nA

Voltage Requirements of the included FET

operation requirements
FET
Drain 3 V ± 0.5 V  3 mA
Source 0 V
Bulk -5 V ± 3 V
Reset 1 V  1 µs
Feedback ramped output

Operation of TEC and Temperature Monitor

operation requirements
Peltier element 4 V 1 A max
temperature monitor slope 2.40 mV/K
520 mV @ +20°C		 1 µA

VITUS H50 pin assignment
VITUS H50 pin assignment

 


Geometries

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The VITUS H50 SDD is encapsulated with a non-bevelled cap on a TO8 socket. The used stainless steel housing can be easily mounted by the M4 stud. 

VITUS H50 detector geometry
VITUS H50 detector geometry

Versions and Ordering Codes

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Available versions and ordering codes
for the VITUS H50:

version and ordering codes

Accessories

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Available KETEK Signal Processing Electronics