The silicon drift detector (SDD) is fabricated on high purity n-type silicon by providing at the entrance side of the radiation a large area homogeneous abrupt pn-junction and on the opposite side a central spot-like n-doped anode, which is surrounded by a number of concentric p-type drift electrodes.
The silicon drift detector (SDD) is fabricated on high purity n-type silicon by providing at the entrance side of the radiation a large area homogeneous abrupt pn-junction and on the opposite side a central spot-like n-doped anode, which is surrounded by a number of concentric p-type drift electrodes.
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